Metallization is one of the multiple steps that deposits a thin metal layer as a conductive pattern to connect various components in a chip, or produces a so-called bonding pad for the bonding of wire leads from a package to a chip. Besides copper, aluminum is the most widely used material for metallization. Aluminum has good conductivity, good adhesion on SiO2, low electrical resistance and good contact with wire bond. It is easy to deposit and also easy to pattern in single deposition and etching processes. Polyimide, a synthetic polymer, is very commonly used as an adhesive or as an insulating layer in various steps during the chip fabrication process. It is light, flexible and has good mechanical and adhesive strength in relation to materials commonly used in microelectronics. Polyimide also has excellent electrical, chemical and heat resistance. In this report we use the Tosca 400 AFM to characterize both polyimide and metallized aluminum thin films.